Zinc oxide thin films have been grown on glass substrate at room temperature by electron beam
evaporation and then were annealed in annealing pressure 600 mbar at different temperatures ranging
from 250 to 550 C for 30 min. Electrical, optical and structural properties of thin films such as electrical
resistivity, optical transmittance, band gap and grain size have been obtained as a function of annealing
temperature. X-ray diffraction has shown that the maximum intensity peak corresponds to the (002)
predominant orientation for ZnO films annealed at various temperatures. The full width at half
maximum, decreases after annealing treatment which proves the crystal quality improvement. Scanning
electron microscopy images show that the grain size becomes larger by increasing annealing temperature
and this result agrees with the X-ray diffraction analysis.
کلید واژگان :
ZnO films X-ray diffraction Annealing temperature Optical transmission SEM images
