Design of 3.1-10.6 GHz ultra-wideband cmos low noise amplifier for wireless applications

two ultra wideband low noise amplifiers (LNAs) are presented. A common source topology is adopted for input stage to achieve wideband input matching, while a cascode stage is used as the second stage to provide power gain at high frequencies. The first work is a LNA with resistive shunt feedback . It achieves a maximum power gain of 10.5 dB, a bandwidth of 10GHz and 8.7dB minimum noise fiqure.The power consumption is 14.28mW from a 1.8v supply. The second work is common source with a reuse pmos current source. It achieves a maximum power gain of 15.2dB and 3.7dB minimum NF.The power consumption is 16 mW from a 1.8 v supply.

CMOS;feedback;gain flaness;low noise amplifier; Ultra wideband(UWB