This paper shows that the nonlinear Poisson-Boltzmann equation for semiconductor devices
describing potential distribution in a Double Gate-Metal Oxide Semiconductor Field Effect Transistor (DGMOSFET)
is exactly solvable. The DG-MOSFET represents one of the most advanced device structures
in semiconductor technology and is a primary focus of modeling efforts in the semiconductor industry.
Furthermore, exact analytical solution is obtained in the implicit form for further physical interpretation
and a full discussion is given.
