The magnetoresistance and Hall coefficient of a doped graphene layer are investigated in the presence of a tilted magnetic field. We consider a graphene layer assembled by either another graphene layer or by a two-dimensional electron gas (2DEG) layer and with the interlayer electron-electron interaction modeled within the random phase approximation. Our calculated magnetoresistances show different interlayer screening effects between decoupled graphene-graphene and graphene-2DEG systems. We also analyze the dependence of dielectric materials as well as the distance between the layers on magnetoresistances. The angle dependence of the Hall coefficient is studied and we show that a quite large Hall resistivity occurs in the graphene layer.
کلید واژگان :double layer system, graphene, electron-electron interaction, magnetlo resistance,
ارزش ریالی : 600000 ریال
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