A Low-Voltage and Low-Power Two-Stage Operational Amplifier Using FinFET Transistors

In this paper, a high gain and low-power FinFET-based amplifier with independent gates is proposed and its design and simulation are performed by HSPICE software and FinFET PTM 32nm technology. The main characteristics of the proposed amplifier such as gain, power consumption, unity gain frequency (UGF), CMRR (common-mode rejection ratio), PSRR (power supply rejection ratio) and settling-time were calculated and compared with a conventional CMOS two-stage amplifier. It was observed that the proposed FinFET-based amplifier has higher performance at lower supply voltage compared to conventional MOSFET-based two-stage amplifier. In the proposed design with the supply voltage of 1 V and 58 µW of power consumption, dc gain of 52 dB and unity gain frequency of 6.4 MHz with a phase margin of 71 degrees were obtained. By comparing the proposed design with conventional CMOS two -stage amplifier in terms of figure of merit it was observed that the figure of merit of the proposed design was improved into 1.2.

Two-Stage Operational Amplifier, FinFET Transistor, High Gain, Low-Voltage, Low-Power.