This paper presents an inductor-less low-noise
amplifier (LNA) design for ultra-wideband (UWB) receivers and
microwave access covering the frequency range from 0.4 to 5.7
GHz using 0.18-μm CMOS. Simulation results show that the
voltage gain reaches a peak of 18.94 dB in-band with an upper 3-
dB frequency of 5.7 GHz. The IIP3 is about -3 dBm and the noise
figure (NF) ranges from 3.15-3.86 dB over the band of interest.
Input matching is better than -8.79dB and the LNA consumes
5.77mW at 1.8V supply voltage. A figure of merit is used to
compare the proposed design with recently published wideband
CMOS LNAs. The proposed design achieves a superior voltage
gain and tolerable NF, with the additional advantage of removing
the bulky inductors. It is shown that the designed LNA without
on-chip inductors achieves comparable performances with
inductor-based designs.
