Extremely High Frequency and Low Power Ring Oscillators Using DG-CNTFET Transistors

In this paper, several ring oscillators based on double gate carbon nanotube field effect transistors (DG-CNTFETs) are presented. In this design, both the advantages of high frequency performance without compromising on power consumption and the capabilities of the carbon nanotube field effect transistor (CNTFET) have been used. Based on the performed simulations and the obtained results in the 32 nm technology and the supply voltage of 0.7 V, the oscillation frequency of these designs are in the range of several tens of GHz and in terms of the amount of power delay product (PDP) in the range of several tens of attojoule. The PDP of proposed designs are extremely low compared to up-to-date advanced techniques, which makes them very suitable for low power and high frequency applications. Also, the proposed circuit shows a strong performance against temperature changes.

Ring oscillator; Double Gate Carbon Nanotube Field Effect Transistor (DG-CNTFET); Low Power; High frequency; Power delay product (PDP)