Employing ab initio total energy calculation, we studied the structural and electronic properties of core-shell InAs/GaAs quantum dots (QDs). In order to identify the role of carrier confinement and the effect of geometrical structure on the electronic properties of QDs, we have performed a super lattice slab calculation for InAs/GaAs (001). Our findings show the type-I and type-II band alignment for the interface and core-shell prototypes, respectively. Finally, we addressed the differences of theoretically predicted band offsets between plan and bended interface.
کلید واژگان :
Electronic States, Quantum Dots, Interface, Core-Shell, InAs/GaAs, ab initio calculation.
